| PART |
Description |
Maker |
| IS42S32400D-6BLI IS42S32400D-6B-TR IS42S32400D-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
|
| 42S16800A IS42S16800A IS42S16800A-6T IS42S16800A-7 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution Inc
|
| IS42LS32400A IS42LS16800A-10B IS42LS16800A-10TI IS |
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| HYB39S128160FE-7 HYB39S128160FEL-7 |
128-MBit Synchronous DRAM
|
Qimonda AG
|
| IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|
| IS45S16800B IS45S16800B-7TA IS45S16800B-7TA1 IS45S |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M48Z129V-70PM1 M48Z129V-85PM1 M48Z129Y-70PM1 M48Z1 |
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER庐 SRAM
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER? SRAM
|
STMicroelectronics
|
| M48T128Y-70PM1 M48T128Y-80PM1 M48T128V-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
