| PART |
Description |
Maker |
| CD214B-T6.5CALF CD214B-T6.5ALF CD214A-T6.5ALF CD21 |
TVS Bidirect Diode 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS Bidirect Diode 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
TVS Unidirect Diode 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:24V; Breakdown Voltage, Vbr:26.7V; Package/Case:DO-214AA; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:600W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:24V; Breakdown Voltage, Vbr:26.7V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:100V; Breakdown Voltage, Vbr:111V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:33V; Breakdown Voltage, Vbr:36.7V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
TVS Diode; Diode Type:Unidirectional TVS; Stand-Off Voltage, VRWM:150V; Breakdown Voltage, Vbr:167V; Package/Case:DO-214AA; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:600W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Package/Case:DO-214AC; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:400W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:20V; Breakdown Voltage, Vbr:22.2V; Package/Case:DO-214AB; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Power PPK @ 10x1000uS:1500W RoHS Compliant: Yes
CD214B Transient Voltage Suppressor Diode Series
|
Bourns, Inc.
BOURNS INC
Bourns Electronic Solutions
|
| AD6623S/PCB AD6623BC/PCB AD6623PCB |
TRANSZORB, 18V, VBR=20V, 20.5AMAX, SMB 4通道04 MSPS的数字传输信号处理器判刑
4-Channel, 104 MSPS Digital Transmit Signal Processor TSP 4通道04 MSPS的数字传输信号处理器判刑
|
Analog Devices, Inc.
|
| 2PC4081S135 |
NPN general-purpose transistor - Complement: 2PA1576S ; fT min: 100 MHz; hFE max: 560 ; hFE min: 270 ; I<sub>C</sub> max: 100 mA; Polarity: NPN ; Ptot max: 200 mW; VCEO max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| MPAT-05840643-4015 MPAT-06400720-4015 MPAT-0750085 |
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
6400 MHz - 7200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
950 MHz - 1750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.2 dB INSERTION LOSS-MAX
1275 MHz - 1480 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| FAN1117AD285X FAN1117AT33X FAN1117AS285X |
FETs - Nch 60VFETs - Nch 150VFETs - Nch 150V2.85 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PSSO2
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FALDM375 FALDM450 FALDM400 ALDM500 FALDM500 |
; Comments: Please ask for the nearest Toshiba distributor about the production works.; Reverse Voltage, max (V): (max 80)
Switching Diodes; Surface Mount Type: Y; Package: SM6; XJE016 JEITA: SC-74; Number of Pins: 6; Features: high-speed switching; Internal connection: 3 in 1; Reverse Voltage, max (V): (max 80)
Logic IC
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 50); I O (A): (max 600)
|
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
| FDS4080N7 |
RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes
40V N-Channel FLMP PowerTrench MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| MPAT-340420-20-10 MPAT-340420-20-15 MPAT-340420-30 |
3400 MHz - 4200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
5845 MHz - 6430 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
11700 MHz - 12200 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
2000 MHz - 2200 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE FIXED ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 17800 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.7 dB INSERTION LOSS-MAX
13750 MHz - 14500 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
1500 MHz - 1800 MHz RF/MICROWAVE FIXED ATTENUATOR, 1.1 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
MITEQ INC
|
| BA682 |
Continuous reverse voltage:max. 35 V Low diode forward resistance:max. 0.7 to 1.2
|
TY Semiconductor Co., Ltd
|
|
