| PART |
Description |
Maker |
| HYB39S256160CT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| LH28F004SU LH28F400SU |
4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory Mb12Kbit × 856千位× 16V单电压闪
|
Sharp Corporation
Sharp, Corp.
|
| MS7202AL MS7201AL MS7200L MS7200-25FC MS7201-25FC |
25ns; 256 x 9, 512 x9, 1K x 9 CMOS FIFO
256 X 9 OTHER FIFO, 25 ns, PQCC32
25ns 256 x 9, 512 x9, 1K x 9 CMOS FIFO
256 x 9 CMOS FIFO
256 x 9, 512 x 9, 1K x 9 CMOS FIFO
FIFO, Single, 256x9, Uni-directional, 5V Supply, Commercial, LDCC, 32-Pin
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| AD5201 AD5207 AD5207BRU100-REEL7 AD5207BRU10-REEL7 |
Dual, 256 Position, Digital Potentiometer
2-Channel/ 256-Position Digital Potentiometer
CONNECTOR ASSEMBLIES RoHS Compliant: Yes
2-Channel, 256-Position Digital Potentiometer DUAL 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO14
2-Channel, 256-Position Digital Potentiometer 2通道56位数字电位器
|
AD[Analog Devices]
Analog Devices, Inc.
|
| FM22LD16-55-BGTR FM22LD1609 FM22LD16 |
4Mbit F-RAM Memory
|
Ramtron International C...
Ramtron International Corp.
Ramtron International Corporation
|
| FM22L16-55-TG FM22L16-55-TGTR |
4Mbit Asynchronous F-RAM Memory
|
Cypress Semiconductor
|
| LH28F400SUN-LC12 LH28F400SUN |
4Mbit(512Kbit x 8/256Kbit x 16) 3.3V Flash Memory
4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| MT89L80 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) 3.3 V Non-blocking Digital Switch (DX)
|
Zarlink Semiconductor
|
| HMN5128JV HMN5128JV-70 HMN5128JV-85 |
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),34Pin-JLCC, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| LH543601M-20 LH543601M-25 LH543601M-30 LH543601P-2 |
256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出
|
Sharp Corporation
Sharp, Corp.
|
