| PART |
Description |
Maker |
| PUMA68F64006IB-90 PUMA68F64006AIB-90 PUMA68F64006I |
2NS, 208 PQFP, IND TEMP(FPGA) 30K GATE, 4NS, 132 BQFP, IND TEMP(FPGA) .NS, 144 TQFP, COM TEMP(FPGA) 15K GATE, 2NS, 100 VQFP, COM TEMP(FPGA) 2NS, 208 PQFP, COM TEMP(FPGA) EEPROM 15K GATE, 4NS, 100 VQFP, COM TEMP(FPGA) EEPROM
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Cirrus Logic, Inc. ON Semiconductor
|
| BD51180TL |
65V, 1A, 2MHz Synchronous Step-Down Regulator with 20ns minimum on pulse
|
ROHM
|
| Z00-24 Z00-16 Z00-4 Z00-10 Z00-6 ZE-24 ZE-04 ZE-6 |
IC,SERIAL EEPROM,NOR FLASH,CMOS,LDCC,20PIN,PLASTIC IC,EPLD, ALTERA,3256A,144TQFP IC MAX 7000 CPLD 192 160-PQFP IC MAX 7000 CPLD 256 100-TQFP IC MAX 7000 CPLD 64 84-PLCC OVERLOAD RELAY 0.4 TO 0.6A NanoPower Voltage Detectors UEBERLASTRELAIS DIL E 0.16 BIS 0.24 UEBERLASTRELAIS迪勒的位.16国际清算银行0.24 FUSE, 2AG SLO-BLO, SUBMINIATURE, GLASS BODY, 5A, 125V 过载继电070A
|
Electronic Theatre Controls, Inc. NEC, Corp.
|
| LFXP15C-3FN484I LFXP3E-4QN208C LFXP3E-3T100C LFXP3 |
FPGA, 1932 CLBS, PBGA484 23 X 23 MM, LEAD FREE, FPBGA-484 FPGA, 1932 CLBS, PBGA484 23 X 23 MM, FPBGA-484 FPGA, 1216 CLBS, PBGA388 23 X 23 MM, FPBGA-388 FPGA, 1932 CLBS, PBGA388 23 X 23 MM, FPBGA-388 FPGA, 384 CLBS, PQFP100 14 X 14 MM, TQFP-100 FPGA, 384 CLBS, PQFP100 14 X 14 MM, LEAD FREE, TQFP-100 FPGA, 2464 CLBS, PBGA388 23 X 23 MM, FPBGA-388 FPGA, 2464 CLBS, PBGA256 17 X 17 MM, FPBGA-256 FPGA, 2464 CLBS, PBGA484 23 X 23 MM, FPBGA-484 FPGA, 720 CLBS, PQFP208 28 X 28 MM, PLASTIC, LEAD FREE, PQFP-208 FPGA, 720 CLBS, PQFP144 20 X 20 MM, LEAD FREE, TQFP-144 FPGA, 720 CLBS, PQFP208 28 X 28 MM, PLASTIC, PQFP-208 FPGA, 720 CLBS, PBGA256 17 X 17 MM, FPBGA-256 FPGA, 720 CLBS, PQFP144 20 X 20 MM, TQFP-144 FPGA, 720 CLBS, PBGA256 17 X 17 MM, LEAD FREE, FPBGA-256 FPGA, 1216 CLBS, PBGA388 23 X 23 MM, LEAD FREE, FPBGA-388 FPGA, 2464 CLBS, PBGA484 23 X 23 MM, LEAD FREE, FPBGA-484 FPGA, 384 CLBS, PQFP208 28 X 28 MM, PLASTIC, PQFP-208 FPGA, 2464 CLBS, PBGA388 23 X 23 MM, LEAD FREE, FPBGA-388 FPGA, 1932 CLBS, PBGA256 FPGA, 1216 CLBS, PBGA256
|
Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
| 7280L20PA |
FIFO 256X9 20NS TSSOP56 512 X 9 BI-DIRECTIONAL FIFO, 20 ns, PDSO56
|
Integrated Device Technology, Inc.
|
| ST24LC21BB1 ST24LW21B1 ST24FC21M1 ST24FW21B1 ST24L |
1 Kbit (x8) Dual Mode Serial EEPROM for VESA PLUG & PLAY IC CONFIG DEVICE 8MBIT 100-PQFP I2C串行EEPROM IC ACEX 1K FPGA 100K 484-FBGA FPGA, FLEX 10K, 10K GATES, TQFP144; Logic IC family:FPGA; Logic IC Base Number:10; Logic IC function:EPF10K10; Voltage, supply:5.0V; Case style:TQFP; Gates, No. of:10000; I/O lines, No. of:102; Pins, No. of:144; Temp, op. RoHS Compliant: Yes IC CONFIG DEVICE 1.6MBIT 32-TQFP MAX 3000A CPLD 32 MC 44-PLCC
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SGS Thomson Microelectronics Honeywell International, Inc.
|
| PUMA2S16000M-025 PUMA77S16000M-020 PUMA2S16000I-02 |
15NS, 68 PLCC, IND TEMP(EPLD) SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC 15NS, 68 PLCC, COM TEMP(EPLD) SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC 20NS, 44 PLCC, IND TEMP(EPLD) 30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA) 15NS, TQFP, COM TEMP, ROHS-A(EPLD) 20NS, 44 TQFP, COM TEMP(EPLD) 7NS, 44 TQFP, COM TEMP, GREEN(EPLD) 30MHZ, 3.3V, 20 PLCC, IND TEMP(FPGA) 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
|
Intel, Corp.
|
| 5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 59 |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Technology
|
| DCG10 |
CPLD Logic IC; Logic Type:Programmable; No. of Macrocells:256 ; Package/Case:208-PQFP; Mounting Type:surface mount High-Speed Rectifiers, High-Frequency Rectifiers
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
| 5962H9475407QLC 5962F9475401QLA 5962F9475401QLC 59 |
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class G. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish gold. Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional. Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish gold.
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Aeroflex Circuit Technology
|
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