| PART |
Description |
Maker |
| ISL9V3040D3SL-TF3-T ISL9V3040D3SL-TA3-T |
300mJ, 400V, N-CHANNEL IGNITION IGBT
|
Unisonic Technologies
|
| FGB3040CS |
EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
|
http://
Fairchild Semiconductor
|
| ISL9V3036D3ST ISL9V3036S3ST |
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT 21 A, 350 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| ISL9V3040D3S04 ISL9V3040S3ST ISL9V3040D3S ISL9V304 |
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| FGB3040CSF085 FGB3040CS-12 |
EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
EcoSPARK300mJ, 400V, N-Channel Current Sensing Ignition IGBT
|
Fairchild Semiconductor
|
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| MUX28 MUX-16AT MUX28AT/883 |
8-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP28
16-Channel/Dual 8-Channel JFET Analog Multiplexers(Overvoltage Protected)
|
ANALOG DEVICES INC
AD[Analog Devices]
|
