| PART |
Description |
Maker |
| IDW40G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| IDW10G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| BXY42-T1 BXY42 BXY42-T BXY42-T1H |
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals)
Publications, Books
From old datasheet system
SILICON, PIN DIODE
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| BA6664FM |
Semiconductor IC
|
ROHM[Rohm]
|
| KIA1117DS00 |
SEMICONDUCTOR
|
KEC(Korea Electronics)
|
| KRC410E |
SEMICONDUCTOR
|
KEC(Korea Electronics)
|
| KIA78R25PI |
SEMICONDUCTOR
|
KEC[KEC(Korea Electronics)]
|
