| PART |
Description |
Maker |
| UPA1919 UPA1919TE UPA1919TE-T2 UPA1919TE-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1911ATE UPA1911A UPA1911ATE-T2 UPA1911ATE-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1918 UPA1918TE UPA1918TE-T2 UPA1918TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1912TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| UPA1970TE UPA1970TE-T2 |
Nch enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| 2SK1384 2SK1384R |
N-CHANNEL ENHANCEMENT TYPE MOS-FET
|
Fuji Electric
List of Unclassifed Manufacturers
|
| 2SK3365-Z-E1 2SK3365-Z-E2 |
N-channel enhancement type Po MOS FET
|
NEC
|
| UPA1725G-E1 UPA1725G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
