| PART |
Description |
Maker |
| UPA1919 UPA1919TE UPA1919TE-T2 UPA1919TE-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1911ATE UPA1911A UPA1911ATE-T2 UPA1911ATE-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1911TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| UPA1817 UPA1817GR-9JG UPA1817GR-9JG-E2 |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC Corp.
|
| SP8J3 |
4V Drive Pch Pch MOS FET
|
Rohm
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| UPA1763G-E1 UPA1763G-E2 |
N-channel enhancement type power MOS FET(Dual type)
|
NEC
|
| 2SK1384 2SK1384R |
N-CHANNEL ENHANCEMENT TYPE MOS-FET
|
ETC
|
| UPA1726G-E2 UPA1726G-E1 |
N-channel enhancement type power MOS FET
|
NEC
|
