| PART |
Description |
Maker |
| MDO500 MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500- |
High Power Diode Modules
High Power Diode Modules 560 A, 1400 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 大功率二极管模块
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| MDD250-16N1 MDD250 MDD250-08N1 MDD250-12N1 MDD250- |
High Power Diode Modules 290 A, 1200 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MDD44 |
HIgh Power Diode Modules
|
IXYS Corporation
|
| RM150CZ-24 RM150DZ-24 RM150UZ-24 RM150CZ-2H RM150D |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM50D2Z-40 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MA8334-001 MA8334-004 MA8334 |
RF High Average Power Multi-Throw PIN Diode Switch Modules
|
M/A-COM Technology Solutions, Inc.
|
| RM10TA-2H RM10TA-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| RM10TN-2H |
Rectifier Diode Modules for ASIPM
Three-Phase Diode Bridge Modules
128 x 64 pixel format, LED Backlight available
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| RM10TN-H RM10 |
From old datasheet system
Three-Phase Diode Bridge Modules
Rectifier Diode Modules for ASIPM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
