PART |
Description |
Maker |
325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM RIEMEN SYNCHRON HTD L 305MM B 15MM RIEMEN SYNCHRON HTD L 575MM B 15MM Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits RIEMEN SYNCHRON HTD L 480MM B 30MM RIEMEN SYNCHRON HTD L 560MM B 200MM RIEMEN SYNCHRON HTD L 600MM B 200MM Dual/Triple-Voltage µP Supervisory Circuits RIEMEN SYNCHRON HTD L 640MM B 200MM Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout RIEMEN SYNCHRON HTD L 720MM B 30MM 3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE RIEMEN SYNCHRON HTD L 880MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 200MM RIEMEN SYNCHRON HTD L 960MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 200MM RIEMEN SYNCHRON HTD L 450MM B 15MM 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 2-Wire-Interfaced 8-Bit I/O Port Expander with Reset Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE RIEMEN SYNCHRON HTD L 1100MM B 15MM RIEMEN SYNCHRON HTD L 980MM B 15MM RIEMEN SYNCHRON HTD L 1800MM B 15MM RIEMEN SYNCHRON HTD L 1120MM B 30MM RIEMEN SYNCHRON HTD L 1120MM B 200MM RIEMEN SYNCHRON HTD L 1200MM B 200MM RIEMEN SYNCHRON HTD L 1260MM B 200MM RIEMEN SYNCHRON HTD L 1600MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 200MM RIEMEN SYNCHRON HTD L 1440MM B 30MM RIEMEN SYNCHRON HTD L 1040MM B 30MM RIEMEN SYNCHRON HTD L 1420MM B 15MM RIEMEN SYNCHRON HTD L 1600MM B 30MM RIEMEN SYNCHRON HTD L 1270MM B 15MM RIEMEN SYNCHRON HTD L 1200MM B 30MM RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米 RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米 RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米 RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd. Amphenol, Corp. Rubycon, Corp.
|
K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
EM48AM1644VBB-8FE EM48AM1644VBC EM48AM1644VBC-75F |
256Mb (4M×4Bank×16) Synchronous DRAM 256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM 256Mb (4M】4Bank】16) Synchronous DRAM
|
http:// Eorex Corporation
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块) 3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块(3.3 256M位内存模块) 3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块(3.3V28兆位内存模块
|
SIEMENS AG
|
K4H561638D-TC_LB0 K4H560838D-TC_LA0 K4H560838D-TC_ |
256MB
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
EM488M3244VBA-8F |
256Mb SDRAM
|
Electronic Theatre Controls, Inc.
|
NT256D64S88ABG |
256MB DIMM
|
Nanya Technology
|
NT256D64S88AAG |
256MB DIMM
|
Nanya Technology
|
W942508BH |
256Mb DDR
|
Winbond
|
NT256S64V8HC0G |
256MB SDRAM Module
|
Nanya Technology
|