| PART |
Description |
Maker |
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| ATF-54143 ATF-54143-BLKG ATF-54143-TR2G |
Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
|
AVAGO TECHNOLOGIES LIMITED
AVAGO TECHNOLOGIES LIMI...
|
| SUP75N04-05L SUB75N04-05L |
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 40V的五（巴西）直| 75A条（丁）| TO - 220AB现有
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
N-Channel Enhancement-Mode Transistors, Logic Level
|
Honeywell International, Inc.
Vishay
|
| ATF-521P8-TR2 ATF-521P8-TR1 ATF-521P8-BLK |
ATF-521P8 · Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in LPCC
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
Agilent (Hewlett-Packard)
ETC[ETC]
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET
N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
|
| TS472IQT TS47206 TS472EIJT |
Very low noise microphone preamplifier with 2.0V bias output and active low standby mode
|
STMicroelectronics
|
| MAX851 MAX851ESA MAX851ISA MAX850 MAX850ESA MAX850 |
Low-noise, regulated, negative charge-pump power supplies for GaAsFET bias. 2mVp-p output voltage ripple. 100kHz chage-pump switching frequency. Logic-level shutdown mode: 1microA max over temp.
Low-Noise, Regulated, Negative Charge-Pump Power Supplies for GaAsFET Bias 低噪声、稳压型、负输出电荷泵，用于GaAsFET偏置电源
Quadruple 2-Input Positive-AND Gates 20-LCCC -55 to 125
Low-Noise, Regulated, Negative Charge Pump Power Supplies for GaAsFET Bias
Low-Noise / Regulated / Negative Charge-Pump Power Supplies for GaAsFET Bias
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| AEPDH1M8LB-85 AEPDS1M8LB-85N AEPDS1M8LB-85P AEPDS1 |
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 24; Temperature Range: 0°C to 70°C
Low Power, Low Noise, Quad Universal Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C x8内存，未定义建筑
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
|
Lin Engineering, Inc.
Unisonic Technologies Co., Ltd.
Sullins Connector Solutions, Inc.
Cypress Semiconductor, Corp.
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| HMC491LP3 |
GaAs MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE/ 3.4 - 3.8 GHz
GaAs MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.4 - 3.8 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
