| PART |
Description |
Maker |
| UFH60GA60P |
Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A
|
Vishay Siliconix
|
| GA100NA60U |
600V UltraFast 10-30 kHz Single IGBT in a SOT-227 package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| GA200SA60S |
600V DC-1 kHz (Standard) Single IGBT in a SOT-227 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| UFB60FA20 |
200V 60A Ultrafast Doubler Diode in a SOT-227 package
Insulated Ultrafast Rectifier Module
|
IRF[International Rectifier]
|
| UFB60FA40 |
400V 60A Ultrafast Doubler Diode in a SOT-227 package
Insulated Ultrafast Rectifier Module
|
IRF[International Rectifier]
|
| RTOP |
Power Resistors for Mounting onto a Heatsink Featuring Up to 4 different ohmic values in the same case, Non inductive, Easy mounting, Low Thermal Radiation of the case, Standard Isotop case (SOT 227 B)
|
Vishay
|
| GB70NA60UF13 |
High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
|
Vishay Siliconix
|
| HFA120EA60 HFA120FA60 |
600V 60A HEXFRED Discrete Diode in a SOT-227 package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| NTF3055-160T1 NTF3055-160T3 NTF3055-160T3LF NTF305 |
TRANSISTOR|MOSFET|N-CHANNEL|60VV(BR)DSS|2AI(D)|SOT-223
From old datasheet system
Power MOSFET 2.0 Amps, 60 Volts N?Channel SOT23(2A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
|
ONSEMI[ON Semiconductor]
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| XC3190A-4PPG175C |
FPGA, 320 CLBS, 5000 GATES, 227 MHz, PPGA175
|
XILINX INC
|
| MIC918 MIC918BC5 MIC918BM5 |
51MHz Low-Power SOT-23-5/SC-70 Op Amp 51MHz低功耗运算放大器SOT-23-5/SC-70
51MHz Low-Power SOT-23-5/SC-70 Op Amp OP-AMP, 5000 uV OFFSET-MAX, 45 MHz BAND WIDTH, PDSO5
|
Micrel Semiconductor, Inc.
Micrel Semiconductor,Inc.
|
