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RM30TA-H - MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

RM30TA-H_3152687.PDF Datasheet

 
Part No. RM30TA-H RM30TPM-M RM30TA-M
Description MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

File Size 50.88K  /  3 Page  

Maker

Mitsubishi Electric Corporation



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Part: RM30TA-H
Maker: MITSUBIS..
Pack: 模块
Stock: Reserved
Unit price for :
    50: $14.77
  100: $14.03
1000: $13.29

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 Full text search : MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
 Product Description search : MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V


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