| PART |
Description |
Maker |
| RT9801APE RT9801BPE RT9801AGE RT9711CPB RT9711CPBG |
80mΩ, 1.5A/0.6A High-Side Power Switches with Flag
80m惟, 1.5A/0.6A High-Side Power Switches with Flag
80m楼?, 1.5A/0.6A High-Side Power Switches with Flag
80mヘ, 1.5A/0.6A High-Side Power Switches with Flag
User Programmable Micro-Power Voltage Detectors
|
Richtek Technology Corporation
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| TDA4817 TDA4817G Q67000-A8299 Q67000-A8298 |
PFC IC for High Power Factor and Acti...
From old datasheet system
Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 0.5 A POWER FACTOR CONTROLLER, PDIP8
Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 功率因数控制器IC，用于高功率因数，有源谐波滤
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| PE6230 |
High Power 200 Watts RF Load Up To 3 GHz With N Male Input High Power Black Anodized Aluminum Heatsink
|
Pasternack Enterprises,...
|
| MJW16212 ON2060 |
Power 10A 650V NPN
POWER TRANSISTOR
From old datasheet system
High and Very High Resolution Monitors
|
ON Semiconductor
http://
|
| AWT6111 AWT6111_REV_2.0 |
The AWT6111 is a high power high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications.
From old datasheet system
Power Amplifiers
|
Anadigics Inc
|
| MT5400-UV-HP |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| MT5355-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
|
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
