| PART |
Description |
Maker |
| PE6230 |
High Power 200 Watts RF Load Up To 3 GHz With N Male Input High Power Black Anodized Aluminum Heatsink
|
Pasternack Enterprises,...
|
| 2SD1641 |
SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HIGH DC CURRNT GAIN,HIGH POWER AMPLIFIER TV POWER SOURCE OUTPUT
|
PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
|
| 2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| JYDC-7-1HP |
High Power Directional Coupler 50?/a> 30 to 500 MHz
From old datasheet system
High Power Directional Coupler 50з 30 to 500 MHz
High Power Directional Coupler 50 30 to 500 MHz
AC-DC Converter, 75 Watt Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 6.25, Package: U Bracket, Isolation(VDC): 3000, Operating Temp.: -25C to 50C, Low Ripple & Noise, High Efficiency up to 80%, Auto-Recovery, Single Outputs
|
http://
MINI[Mini-Circuits]
|
| MT5400-UV-HP |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| MT5375-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
