| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M484M1644 |
64Mb SDRAM
|
eorex
|
| WED3DG649V7D2 WED3DG649V75D2 WED3DG649V10D2 WED3DG |
64MB- 8M x 64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WED3DG728V-D1 WED3DG728V7D1 WED3DG728V10D1 WED3DG7 |
64MB - 8Mx72 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HY57V641620HGTP-5I HY57V641620HGTP-7 |
4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 64Mb
|
HYNIX SEMICONDUCTOR INC
|
| W3DG7216V7D2 W3DG7216V75D2 W3DG7216V10D2 W3DG7216V |
64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD
|
White Electronic Designs Corporation
|
| HYM71V8635BT6 HYM71V8635BT6-H |
8Mx64|3.3V|K/H|x4|SDR SDRAM - Unbuffered DIMM 64MB
8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| EM484M1644VTA-7F EM484M1644VTA-7FE EM484M1644VTA-6 |
64Mb (1M隆驴4Bank隆驴16) Synchronous DRAM
64Mb (1M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
