| PART |
Description |
Maker |
| TGF4260-EPU |
9.6mm Discrete HFET C BAND, Si, RF SMALL SIGNAL, HFET
|
TriQuint Semiconductor, Inc.
|
| TGF4240-SCC |
2.4 mm Discrete HFET X BAND, Si, N-CHANNEL, RF POWER, HFET
|
TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| TGF4112-EPU TGF4112 |
12 mm Discrete HFET
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| FP1189 |
HFET
|
WJ Communications
|
| SHF-0186K |
0.05-6 GHz, 0.5 Watt GaAs HFET
|
SIRENZA MICRODEVICES
|
| SHF-0189 |
0.05 - 6 GHz, 0.5 Watt GaAs HFET
|
Electronic Theatre Controls, Inc.
|
| TGF2961-SD |
1 Watt DC-4 GHz Packaged HFET
|
TriQuint Semiconductor
|
| SHF-0189 |
0.05-6 Ghz, 0.5 Watt GAAS HFET
|
SIRENZA
|
| MMH3111NT108 |
Heterostructure Field Effect Transistor (GaAs HFET)
|
Freescale Semiconductor, Inc
|
| 2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
