| PART |
Description |
Maker |
| HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| VG3617161BT VG3617161BT-7 VG3617161BT-8 VG3617161B |
16Mb CMOS Synchronous Dynamic RAM
|
List of Unclassifed Manufac...
|
| VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| CXK77P18E160GB CXK77P18E160GB-42AE CXK77P18E160GB- |
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18)
|
SONY[Sony Corporation]
|
| IS42S16100E-6TL IS42S16100E-6BLI IS42S16100E-6TLI |
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| KMM53616000BK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
| MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
| HY64UD16162M |
Mobile PSRAM - 16Mb
|
Hynix Semiconductor
|
| IS41C44002C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| DS3070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 3.3V的单16Mb的非易失SRAM，带有时
|
Maxim Integrated Products, Inc.
|
| N16L163WC2CZ1-55IL N16L163WC2C N16L163WC2CT1 N16L1 |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 16 bit
16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| M29W128FH M29W128FH60N6E M29W128FH60N6F M29W128FH6 |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
