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ES29BDS160E-12RTG - 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory 32兆(4米8/2M × 16),3.0伏的CMOS只,引导扇区闪存

ES29BDS160E-12RTG_3084740.PDF Datasheet

 
Part No. ES29BDS160E-12RTG ES29DL160D-12RTG ES29BDS160F-12RTG ES29BDS160D-12RTG ES29BDS320F-12RTG ES29BDS320D-12RTG ES29BDS640FB-80RTG ES29BDS800D-12RTG
Description 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory 32兆(4米8/2M × 16),3.0伏的CMOS只,引导扇区闪存

File Size 604.95K  /  59 Page  

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优先(苏州)半导体有限公



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 Full text search : 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory 32兆(4米8/2M × 16),3.0伏的CMOS只,引导扇区闪存
 Product Description search : 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory 32兆(4米8/2M × 16),3.0伏的CMOS只,引导扇区闪存


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CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CQCC32
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CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, PDIP28
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