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KMM5361203C2W - 1M x 36 DRAM SIMM(1M x 36 动RAM模块)

KMM5361203C2W_3055326.PDF Datasheet


 Full text search : 1M x 36 DRAM SIMM(1M x 36 动RAM模块)
 Product Description search : 1M x 36 DRAM SIMM(1M x 36 动RAM模块)


 Related Part Number
PART Description Maker
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY    3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY 4M x 4 Bit 2k 5 V 60 ns FPM DRAM
4M x 4 Bit 4k 5 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM
4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM
4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM
-4M x 4-Bit Dynamic RAM
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C 1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
Electronic Theatre Controls, Inc.
Rochester Electronics, LLC
Integrated Silicon Solution, Inc.
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT 8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
Infineon Technologies AG
MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE 1 MEG x 4 DRAM Fast Page Mode DRAM
Austin Semiconductor
http://
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 128Mb (2MBank16) Synchronous DRAM
128Mb (2MBank6) Synchronous DRAM 128Mb的(200万Bank6)同步DRAM
128Mb (2M??Bank??6) Synchronous DRAM
Electronic Theatre Controls, Inc.
MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Qimonda AG
SMSC, Corp.
IS42SM32100C IS42RM32100C-6BLI 512K x32Bits x2Banks Low Power Synchronous DRAM
1M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
HY5756820C HY57V56820CLT-P HY57V56820CT-H HY57V568 4 Banks x 8M x 8Bit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
SDRAM - 256Mb
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
 
 Related keyword From Full Text Search System
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