| PART |
Description |
Maker |
| STRH40P10FSY3 |
P-channel 100V - 0.060 Ohm - TO-254AA - Rad-hard low gate charge STripFET Power MOSFET
|
ST Microelectronics, Inc.
|
| APT60M60JFLL |
POWER MOS 7 600V 70A 0.060 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT50M60L2VFR |
POWER MOS V 500V 77A 0.060 Ohm
|
Advanced Power Technology
|
| 0579649702 57964-9702 |
1.52mm (.060) OBD-;II Male Terminal for AVS(CAVS) 0.3-0.5
MOLEX Connector
|
Molex Electronics Ltd.
|
| 0685120211 68512-0211 |
1.52mm (.060) Pitch, Female Housing Assembly, 2 Circuits
MOLEX Connector
|
Molex Electronics Ltd.
|
| RF3S49092SM F3S49092 |
20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| SI4982DY SI4982DY-T1 |
2.6 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Dual N-Channel 100-V (D-S) MOSFET
Dual N-Channel, 100-V, (D-S) Rated MOSFET
|
VISHAY INTERTECHNOLOGY INC
VISAY[Vishay Siliconix]
|
| SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
|
