| PART |
Description |
Maker |
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| WEDPN8M72V-133BC |
8Mx72 High-speed CMOS,Synchronous DRAM(8M x 72高速CMOS同步动态RAM) 8Mx72高速CMOS，同步DRAM米72高速的CMOS同步动态RAM）的
8Mx72 High-speed CMOS,Synchronous DRAM(8M x 72楂??CMOS????ㄦ?RAM)
|
Hanbit Electronics Co., Ltd.
|
| AS4LC2M8S1 AS4LC2M8S1-10TC AS4LC2M8S1-12TC AS4LC2M |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM
3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation]
|
| MB814100D-60 MB814100D-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
CMOS 4 M ?1 BIT Fast Page Mode DRAM(CMOS 4 M ?1浣??椤甸?瀛??妯″??ㄦ?RAM)
|
Fujitsu Limited
|
| MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| AS4LC2M8S0-8TC AS4LC1M16S0-8TC AS4LC2M8S0-7TC AS4L |
3.3V 2M ??8/1M ??16 CMOS synchronous DRAM
3.3V 2M 8/1M 16 CMOS synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
3.3V 2M × 8/1M × 16 CMOS synchronous DRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
|
| AS4C1M16E5-50JC AS4C1M16E5-60JC AS4C1M16E5-60JI AS |
5V 1M x 16 CMOS DRAM (EDO)
5V 1M】16 CMOS DRAM (EDO)
5V 1M16 CMOS DRAM (EDO)
|
ALSC[Alliance Semiconductor Corporation]
|
| MCM54410AN60 MCM54410AN60R2 MCM54410AN-60 MCM54410 |
1M x 4 CMOS DRAM
1M x 4 CMOS Dynamic RAM Write Per Bit Mode
|
Motorola, Inc
|
| HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V1 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 8M x 16Bit Synchronous DRAM
SDRAM|4X8MX16|CMOS|TSOP|54PIN|PLASTIC 内存| 4X8MX16 |的CMOS |的TSOP | 54PIN |塑料
|
HYNIX SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| HM51W4265CLTT-6 |
CMOS 4M DRAM
|
ETC
|
| KM41C256 |
CMOS DRAM
|
Samsung Electronics
|
