| PART |
Description |
Maker |
| WT-Z106N-AU4 |
Zener Diode Chips for ESD Protection
|
Weitron Technology
|
| WT-Z210V-AU4 |
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
|
Weitron Technology
|
| BZX79C100 BZX79C3V0 BZX79C2V7 BZX79C24 BZX79C18 BZ |
33V, 0.5W Zener Diode
Zeners 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
SOTiny Dual SPDT Mux/DeMux Switch
5.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
13V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| CD4678 CD4689 CD4706 CD4685 CD4686 CD4701 CD4681 C |
Zener Diode Chips(片状齐纳二极 齐纳二极管芯片（片状齐纳二极管）
surface mount silicon Zener diodes 表面贴装硅稳压二极管
|
Compensated Deuices Inc...
CDI-DIODE[Compensated Deuices Incorporated]
Powerex Power Semiconductors
EPCOS AG
|
| 2CW032200JL 2CW032082JL 2CW032510JL 2CW032300JL 2C |
2CW032XXXJL SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE
2CW032XXXJL SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE
|
Silan Microelectronics ...
Silan Microelectronics Joint-stock
|
| 2CW035680JL 2CW035200JL 2CW035100JL 2CW035110JL 2C |
2CW035XXXJL SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE
2CW035XXXJL SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE
|
Silan Microelectronics ...
Silan Microelectronics Joint-stock
|
| 2CW032560YQ-2 2CW032560YQ-5 |
ZENER DIODE CHIPS
|
Silan Microelectronics
|
| DF3A6.2LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S6.8S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
