| PART |
Description |
Maker |
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR Rugged Series Power MOSFETs - N-Channel TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6.8AI(四)|47 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 5.4AI(四)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 4A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 2.25AI(四)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 1.35AI(四)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp. Intersil, Corp. Infineon Technologies AG Fairchild Semiconductor, Corp.
|
| IXTP15N30MB IXTP15N30MA IXTH12N45MA IXTH15N35MB IX |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 67A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 24A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 20A条(丁)|的Z -委员
|
Ricoh Co., Ltd.
|
| MHT8P20 MTP3N12 VN2410B |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-258AA TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 700MA I(D) | TO-39 晶体管| MOSFET的| N沟道| 240伏五(巴西)直| 700mA的一d)| TO - 39封装
|
Microchip Technology, Inc.
|
| STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五(巴西)直|甲(丁)|52 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件 STD2N50-1 I-PAK MOSFET-TRANSIT N-CHANNEL MOSFET
|
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
| STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR N-CHANNEL Power MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五(巴西)直| 5.5AI(四)|计划生育 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五(巴西)直| 8A条(丁)|计划生育
|
Mitsubishi Electric, Corp.
|
| IRFU3709 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 90A型(丁)|51AA HEXFET? Power MOSFET SMPS MOSFET
|
International Rectifier, Corp. IRF[International Rectifier]
|
| FDP7030BLSS62Z FDB7030BLS |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 30V的五(巴西)直|6A条(丁)|63AB TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-220AB
|
Fairchild Semiconductor, Corp. ITT, Corp. FAIRCHILD SEMICONDUCTOR CORP
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE (289.19 k) TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes T-PNP-SI-AF PO- .75W T-NPN- SI-PO & SW-PD 40 W 或非 MOSFET-PWR N-CH HI SPEED 或非 MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非 MOSFET-PWR 800V 4A 或非 NOR GATE 或非 MOSFET-PWR 500V 8A
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
| FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 30A条(丁)| TO - 220AB现有
|
Powerex, Inc.
|