| PART |
Description |
Maker |
| LH28F400BVHE-TL85 |
4MB (512KB x 8/256KB x 16) SmartVoltage Flash Memory(4M512Kx 8/256K位x 16)闪速存储器)
|
Sharp Corporation
|
| M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽，引导块V电源快闪记忆
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| MCM36F7DG10 MCM36F6 MCM36F6DG10 MCM36F7 |
256KB and 512KB Synchronous Fast Static RAM Module
|
MOTOROLA[Motorola, Inc]
|
| MCM72CF64SG66 MCM72CF32 MCM72CF32SG66 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| M28F420 |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器)
|
意法半导
|
| M29W400DT45N1 M29W400DT45N6E M29W400DT55M1 M29W400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29F400BT M29F400BB |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
|
| M29F400B-120M1R M29F400B-120M1TR M29F400B-120M3R M |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MPC2004 MPC2005 |
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB12KB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| M76DW52003TA90ZT M76DW52003BA M76DW52003BA70ZT M76 |
SPECIALTY MEMORY CIRCUIT, PBGA73
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
