| PART |
Description |
Maker |
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| FLL107ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
|
| FLU35XM |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET
|
Fujitsu Media Devices Limited
|
| FLL107ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL400IP-3 |
L-Band Medium & High Power GaAs FET
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| AWT6108 AWT6108M10P8 |
This quad band power amplifier module is designed to support dual, tri and quad band applications.
Power Amplifiers
Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Anadigics Inc
ANADIGICS, Inc.
|
| CPA-118-PAA CPA-111-PBA CPA-114-PBA CPA-110-PBM |
1750 MHz - 3000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NEC, Corp.
M/A-COM Technology Solutions, Inc.
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| AH1-PCB AH1-1 AH1-1G |
250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
High Dynamic Range Amplifier
|
WJCI[WJ Communication. Inc.]
|
| RF2131PCBA RF2131 |
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| DMJ2502-000 DME2029-000 |
Beam-Lead Ring Quad, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band S, C
Beam-Lead Bridge Quad, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band S, C
|
Skyworks Solutions
|
