| PART |
Description |
Maker |
| MHVIC2115NR2 |
2170 MHz, 26 V, 23/34 dBm W??DMA RF LDMOS Wideband Integrated Power Amplifier
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MAX11008 MAX11008BETM |
Dual RF LDMOS Bias Controller with Nonvolatile Memory
|
Maxim Integrated Products
|
| MW6IC2420NBR108 MW6IC2420NBR1 |
RF LDMOS Integrated Power Amplifier
|
http://
Freescale Semiconductor, Inc
|
| MHV5IC1810NR2 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| MW6IC1940GNBR1 |
RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| 55410 NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Laboratories
|
| PTMA210152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 ?2200 MHz
|
Infineon Technologies AG
|
| PTMA180402M |
Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ?2100 MHz
|
Infineon Technologies AG
|
| PTMA080152 PTMA080152M |
Wideband RF LDMOS Integrated Power Amplifier 15 W, 28 V, 700 ?1000 MHz
|
Cree, Inc
|
| PTMA210452EL PTMA210452FL |
Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 ?2200 MHz
|
Infineon Technologies AG
|
