| PART |
Description |
Maker |
| BSS138PS |
60 V, 320 mA dual N-channel Trench MOSFET 320 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| FCD600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m
|
Fairchild Semiconductor
|
| PMFPB6532UP |
20 V, 3.5 A - 320 mV VF P-channel MOSFET-Schottky combination
|
NXP Semiconductors N.V.
|
| VP0300LP013 |
320 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SUPERTEX INC
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| MGP11N60E_D ON1851 MGP11N60E ON1848 |
From old datasheet system
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| CM150TU-12H |
240 x 128 pixel format, CFL Backlight with power harness 150 A, 600 V, N-CHANNEL IGBT
Six IGBTMOD 150 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| ILA03N60 ILD03N60 |
3 A, 600 V, N-CHANNEL IGBT, TO-220AB
4.5 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
INFINEON TECHNOLOGIES AG
|
| STGW30NC60KD |
60 A, 600 V, N-CHANNEL IGBT, TO-247
30 A - 600 V - short circuit rugged IGBT
|
STMicroelectronics
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
|
