| PART |
Description |
Maker |
| MC-42S8LFF64S |
3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压3.4V的DRAM模块)
|
NEC Corp.
|
| MC-42S4LFG64S |
3.3 V Operation 16M-Word By 65-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
|
NEC Corp.
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| UPD23C16000BLGY-XXX-MJH UPD23C16000BLGY-XXX-MKH UP |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) 1,600位掩膜可编程ROM00万字位（字节模式 100万字6位（字模式）
|
NEC, Corp.
NEC Corp.
|
| M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位，超页模式
|
NEC TOKIN America Inc.
NEC TOKIN, Corp.
|
| MBM29DL161BE-90TN MBM29DL163BE-70PBT MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
http://
|
| MR27V12800J-XXXTYE MR27V12800J MR27V12800J-XXXTN M |
8M-Word x 16-Bit or 16M-Word x 8-Bit P2ROM
|
OKI[OKI electronic componets]
|
| THLY641641FG-80 THLY641641FG-80L THLY641641FG-10L |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块)
|
Toshiba Corporation
|
