PART |
Description |
Maker |
HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
HYM72V1600GS-50 HYM72V1610GS-50 HYM72V1600GS-50- H |
16M x 72-Bit Dynamic RAM Module 16米x 72位动态随机存储器模块 16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
|
SIEMENS AG Siemens Semiconductor Group
|
MBM29LV016T-80PTN MBM29LV016T-80PTR MBM29LV016B-80 |
16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 120 ns, PDSO40 16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 90 ns, PDSO40 16M (2M x 8) BIT 2M X 8 FLASH 3V PROM, 80 ns, PDSO40 630 V driver IC for CFL and
|
Fujitsu, Ltd. Fujitsu Limited http:// Fujitsu Component Limited.
|
LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器) Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation Sharp Electrionic Components
|
MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
MBM29DL161TE-70 MBM29DL161TE-90 MBM29DL162TE-90 MB |
16M (2MX8/1MX16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 12 ns, PDSO48 TVS BIDIRECT 600W 48V SMB 16米(2米x 8/1M × 16)位双操 8 PORT MODULAR SWITCH 4 PORT 100MB MULTI-MODE FIBER BANDWIDTH MANAGER MODULE TP 16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
NEC, Corp. NEC Corp.
|
MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp. NEC Corp.
|
KM23C16205DSG |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
UPD23C128000BLGY-XXX-MJH UPD23C128000BLGX-XXX UPD2 |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|