| PART |
Description |
Maker |
| 313272-06 PF38F5070M0Y0B0 |
Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO
|
Numonyx B.V
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| JS28F128J3D-75 JS28F320J3D-75 PC28F128J3D-75 TE28F |
Numonyx?/a> Embedded Flash Memory (J3 v. D)
Numonyx Embedded Flash Memory (J3 v. D)
|
Intel Corporation
Numonyx B.V
|
| GT28F320W18BD80 GT28F320W18TC80 GT28F320W18TD60 GT |
Intel㈢ Wireless Flash Memory
|
INTEL[Intel Corporation]
|
| PC28F128P30 |
Numonyx StrataFlash Embedded Memory
|
Numonyx
|
| CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory
90ns 2M-bit CMOS flash memory
70ns 2M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| RD28F3204W30B70 GT28F640W30T85 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
|
Intel Corporation
|
| AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
| W39V040A W39V040AQ W39V040AP |
3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE
|
Winbond Electronics
WINBOND[Winbond]
|
| MB84VB2000-10 MB84VB2001 MB84VB2001-10 |
PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
