| PART |
Description |
Maker |
| T431616C-7SG T431616C T431616C-6S T431616C-6SG T43 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| T431616B-20S T431616B T431616B-10C T431616B-10S T4 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M12S16161A-15T M12S16161A-15TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M12S16161A07 M12S16161A-7BG M12S16161A-7TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52D16161A-10BG M52D16161A-10TG M52D16161A |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6 |
512K x 4 BANKS x 32 BITS SDRAM
x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| M52D16161A-10BIG M52D16161A-10TIG M52D16161A-6BIG |
512K x 16Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
|
| K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/ |
512K x 16Bit x 2 Banks Synchronous DRAM 12k × 16 × 2银行同步DRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M28163PH |
2M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| IC43R16800 |
2M x 16bit x 4 Banks DDR SDRAM
|
Integrated Circuit Solution
|
| A43L0616AV-5.5 |
5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
