| PART |
Description |
Maker |
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| ZIF100 |
Direct Conversion 4 FSK Data Receiver
Direct Conversion 4FSK Data Receiver Target Specification
|
Zarlink Semiconductor Inc.
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| HYR1612820 HYR183220G-840 HYR1612820G-653 HYR18642 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) 直接的RDRAM RIMM的模块（44兆RDRAMs
CONN HEADER .100 DUAL STR 72POS
CONN HEADER .100 DUAL R/A 72POS
128M X 16 DIRECT RAMBUS DRAM MODULE, 2.06 ns, DMA184
|
INFINEON[Infineon Technologies AG]
|
| UPD488448 UPD488448FB-C60-53-DQ1 UPD488448FB-C60-5 |
128 M-bit Direct Rambus⑩ DRAM
128 M-bit Direct Rambus DRAM
|
NEC[NEC]
|
| EDR2518ABSE-8C EDR2518ABSE-8C-E EDR2518ABSE-AD-E E |
CHOKE RF HI CURRENT 150UH 10%
Circular Connector; No. of Contacts:37; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-35 RoHS Compliant: No
288M bits Direct Rambus DRAM 16M X 18 DIRECT RAMBUS DRAM, PBGA80
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| 2650D15 2650D05 2650D12 2650MD15 2650S05.2 2650MT1 |
ISDB-T 1- and 3-Segment Low-IF Tuners
5V High-Speed RS-232 Transceivers with 0.1uF Capacitors 5V的高RS - 232收发器与0.1uF电容
Evaluation Kit for the MAX2116, MAX2118 模拟IC
Direct-Conversion to Low-IF Tuners for Digital Audio Broadcast 模拟IC
Evaluation Kit for the MAX2160 模拟IC
Complete DBS Direct-Conversion Tuner ICs with Monolithic VCOs 模拟IC
Evaluation Kit for the MAX2130
|
Littelfuse, Inc.
Advanced Interconnections, Corp.
Maxim Integrated Products, Inc.
Micro Commercial Components, Corp.
STMicroelectronics N.V.
|
| BR9016AF-W BR9016ARFVM-W BR9016ARFV-W BR9080ARFV B |
8k/ 16k bit EEPROMs for direct connection to serial ports
8k 16k bit EEPROMs for direct connection to serial ports
8k, 16k bit EEPROMs for direct connection to serial ports 分为8K6K，可直接连接到串行端口位的EEPROM
512 X 16 4-WIRE SERIAL EEPROM, PDSO8
1K X 16 4-WIRE SERIAL EEPROM, PDSO8
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| MB54608B MB54608L MB54608LPFV MB54608LPV1 |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 800 MHz - 1000 MHz RF/MICROWAVE I/Q MODULATOR
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 1.0 GHz频段的低功率的I / Q调制器的直接转换
|
Fujitsu Microelectronics
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu, Ltd.
|
| MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http://
Elpida Memory
|
