| PART |
Description |
Maker |
| MGFL48V1920 MGFL48V192011 |
1.9-2.0 GHz BAND / 60W
|
Mitsubishi Electric Semiconductor
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| MGFL48V1920 |
From old datasheet system
1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PH1516-60 |
Wireless Bipolar Power Transistor 60W, 1450-1550 GHz
|
M/A-COM Technology Solutions, Inc.
|
| SST13LP05-MLCF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SILICON STORAGE TECHNOLOGY INC
|
| AN26031A |
Single Band LNA-IC for 2.5 GHz Band Applications
|
Panasonic Battery Group
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
| STK415-100-E |
2-Channel Power Switching Audio Power IC, 60W 60W
|
Sanyo Semicon Device
|
| PHI516160 PH1516-60 |
Wireless Bipolar Power Transistor, 60W 1450 - 1550 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
Wireless Bipolar Power Transistor/ 60W 1450 - 1550 MHz
|
Tyco Electronics
|
| ZX60-M-SERIES ZX60-2510M ZX60-2514M ZX60-2522M ZX6 |
High Isolation Amplifiers 50з, 0.5 to 5.9 GHz 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Isolation Amplifiers 50? 0.5 to 5.9 GHz
From old datasheet system
High Isolation Amplifiers 50/ 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
