| PART |
Description |
Maker |
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
| MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| W981216AH-8H W981216AH-75 W981216AH |
2M x 16 bit x 4 Banks SDRAM
x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| MT40A512M16JY-075EAIT MT40A512M16JY-083E |
8Gb: x4, x8, x16 DDR4 SDRAM
Automotive DDR4 SDRAM
|
Micron Technology
|
| UPD45256163G5-A10L-9JF UPD45256163G5-A10B-9JF UPD4 |
x16 SDRAM
|
NEC Electronics Inc
|
| HY57V281620ALT-H HY57V281620AT-6 HY57V281620AT-H H |
x16 SDRAM x16内存
|
Hynix Semiconductor, Inc.
|
| MT48LC128M4A207 |
512Mb x4, x8, x16 SDRAM
|
Micron Technology
|
| MT48LC32M16A2 MT48LC128M4A2 |
512Mb x4, x8, x16 SDRAM
|
Micron Technology
|
| IS43DR16128 IS43DR16128-3DBI IS43DR16128-3DBL IS46 |
2Gb (x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
| K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| HYB18T512161B2F HYB18T512161B2F-20_25 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
