| PART |
Description |
Maker |
| IKP20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| STGW60H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
|
ST Microelectronics
|
| STGW40H120DF2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| STGW20H60DF STGWT20H60DF |
Low thermal resistance
600 V, 20 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
