| PART |
Description |
Maker |
| K4X51323PC-7E K4X51323PC-7EC3 K4X51323PC-7GC3 K4X5 |
16M X32 MOBILE-DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| H5MS1G22MFP-L3M H5MS1G32MFP-L3M H5MS1G22MFP-E3M H5 |
1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M58LW064 M58LW064BT M58LW064A150T6T M58LW064AZA M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories 64兆位x16和x16/x32，块擦除低压闪存
|
意法半导
STMicroelectronics N.V.
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| K7A401800B-QC K7A403600B-QC K7A403200B-QC K7A40360 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HB52F328DC-75BL |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 133 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC133 SDRAM
x64 SDRAM Module X64的内存模
|
Elpida Memory
Vishay Intertechnology, Inc.
|
| UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
| HYS72D64020GU HYS64D64020GU |
2.5 V 186-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184脚、寄存型512MDDR-I SDRAM 模块)
|
SIEMENS AG
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
