| PART |
Description |
Maker |
| IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM
2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics
International Business Machines, Corp.
|
| IS41LV8200 IS41LV8200-50J IS41LV8200-50JI IS41LV82 |
5V 2M x 8(16-MBIT) dynamic RAM with edo page mode
2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 2M X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
|
Micron Technology
|
| HYB514405BJL-70 HYB514405BJL-60 HYB514405BJL-50 HY |
1M x 4 Bit EDO DRAM 5 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| NN518125LJ-70 NN518125LJ-50 NN518125LJ-60 NN518125 |
x8 EDO Page Mode DRAM
|
|
| AS4LC4M4883C AS4LC4M4 |
4 meg x 4 DRAM, 3.3V EDO page mode
4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
|
ETC
AUSTIN[Austin Semiconductor]
|
| IS41C44002C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| IS41C16100C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
| M11L416256SA-35JP M11L416256SA-35TG |
256 K x 16 DRAM EDO PAGE MODE
|
Elite Semiconductor Mem...
Electronic Theatre Controls, Inc.
|
| M11L416256SA-35JP M11L416256SA-35TG M11L416256SA |
256 K x 16 DRAM EDO PAGE MODE
|
ETC
Elite Semiconductor Memory Technology Inc.
|
