| PART |
Description |
Maker |
| M63823FP M63823GP M63823P M63823P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| TB62004FW B62006F TB62003FW TB62008F TB62008FW TB6 |
8CH DMOS TRANSISTOR ARRAY WITH GATE THROUGH & DMOS DRIVER
Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC 8CH DMOS TRANSISTOR ARRAY WITH GATE
8CH DMOS TRANSISTOR ARRAY WITH GATE INVERTER & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NOR & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NAND & DMOS DRIVER
|
TOSHIBA
|
| LB1231 LB1233 LB1232 LB1234 |
High-Voltage, Large Current Darligton Transistor Array
High-Voltage, High- Current Darlington Transistor Array
PERIPHERAL DRIVER,7 DRIVER,BIPOLAR,DIP,16PIN,PLASTIC
Septuple Peripheral Driver
From old datasheet system
High-Voltage / High- Current Darlington Transistor Array
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor Corp
Sanyo Electric Co.,Ltd.
|
| PWRNCH401PUC2 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 300V V(BR)DSS | 335MA I(D) | DIP 晶体管| MOSFET的|阵| N沟道| 300V五（巴西）直| 335MA（丁）|双酯
|
Avago Technologies, Ltd.
|
| IRFP040 IRF9622 IRF9612 IRFP362 IRFP343 |
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 1.5A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 1.5AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 900MA I(D) | TO-220AB
TRANSISTOR|MOSFET|P-CHANNEL|200VV(BR)DSS|1.5AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|40AI(D)|TO-247AC
|
International Rectifier, Corp.
|
| TH3L20 TH3J10 TH3C10 TH3L10 |
TRANSISTOR,BJT,ARRAY,DARLINGTON,200V V(BR)CEO,3A I(C),SIP
TRANSISTOR,BJT,ARRAY,DARLINGTON,100V V(BR)CEO,3A I(C),SIP
High Voltage / High Speed Switching Transistors
From old datasheet system
|
Shindengen Electric Mfg
|
| LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| CTA2N1P-7-F |
COMPLEX TRANSISTOR ARRAY 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Inc.
Diodes, Inc.
|
| DDC144NS |
100mA PRE-BIASED TRANSISTOR ARRAY USING DUAL NPN TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| HBDM60V600W-7 |
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
|
Diodes Incorporated
|
| UPA1456 UPA1456H |
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC[NEC]
|
| HS0-6254RH-Q HS1-6254RH HS-6254RH 5962F9764101VXC |
Radiation Hardened Ultra High Frequency
NPN Transistor Array(抗辐射甚高频NPN晶体管阵
1500PF 50V 0805
BJT
Radiation Hardened Ultra High Frequency NPN Transistor Array 辐射加固超高频NPN晶体管阵
|
Intersil Corporation
Intersil, Corp.
|
