| PART |
Description |
Maker |
| 500L-058X181-502 500T-058X071-501 500T-058X071-502 |
5000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
500:5 A, 2 % ACCURACY CLASS, CURRENT TRANSFORMER
4000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
400:5 A, 3 % ACCURACY CLASS, CURRENT TRANSFORMER
750:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
2500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1200:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
|
GE Industrial Systems
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| PP0640SA PP0640SB |
Thyristor, Thyristor, 58V Forward Blocking Voltage, 1A On-State Current, 150mA Holding Current, 1420A RMS Current
BIDIRECTIONAL THYRISTOR SURGE SUPPRESSOR
|
Protek Devices
|
| STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
|
|
| X5165PI X5163V14I-2.7T1 X5165V14-2.7T1 X5165V14I-2 |
CPU Supervisor with 16Kbit SPI EEPROM Description
THYRISTOR MODULE, 95A, 0800V; Thyristor/Triac type:Thyristor; Voltage, Vdrm:800V; Current, It rms:150A; Current, Itsm:2000A; Current, Igt:150mA; Voltage, Vgt:3.0V; Case style:SEMIPACK 1; Centres, fixing:80mm; Current, It av:95A; RoHS Compliant: Yes
RTC Module With CPU Supervisor
; Repetitive Reverse Voltage Max, Vrrm:1600V; Current, It av:70A; Forward Current:125A; Operating Temp. Max:125 ; Package/Case:SEMIPACK 1; Peak
|
http://
Intersil Corporation
|
| MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| STIP10 STI60 STI80 STI90 STIP805 STIP60 |
SURGE ARRESTER GDT 90V SMD
DIODE TVS 9.1V 600W BIDIR 5% SMB
TRANSISTOR | BJT | NPN | 900V V(BR)CEO | 1A I(C) | TO-5
DIODE TVS 47V 600W UNIDIR 5% SMB 晶体管|晶体管|叩| 600V的五（巴西）总裁| TO - 39封装
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
|
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
| XL6005 |
180KHz 60V 4A Switching Current Boost LED Constant Current Driver
|
XLSEMI
|
