| PART |
Description |
Maker |
| SST45VF010 SST45VF010-10-4C-SA SST45VF020 SST45VF0 |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, PDSO8
4 Mbit Uniform Sector, Serial Flash Memory 1M X 1 FLASH 2.7V PROM, PDSO8
512 Kbit / 1 Mbit / 2 Mbit Serial Flash
|
Silicon Storage Technology, Inc.
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| M29W800DB45N1E M29W800DB M29W800DB45M1E M29W800DB4 |
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
|
Numonyx B.V
|
| M36P0R9060N0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| CY7C1354CV25-166AXC CY7C1356CV25-166AXC CY7C1354CV |
9-Mbit (256 K 36/512 K 18) Pipelined SRAM with NoBLArchitecture
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| 0219002. 0219005. 021906.3 219002 0219001. 0219004 |
5 x 20 mm Time Lag Fuse (SIo-Blo) Fuse 219 Series 5 × 20毫米时滞保险丝（希欧- Blo）保险丝219系列
|
LITTELFUSE[Littelfuse]
Littelfuse, Inc.
|
| EN25LF05 |
512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector
|
Eon Silicon Solution Inc.
|
| EN25F05-100GIP EN25F05-100VI EN25F05-100VIP EN25F0 |
512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector
|
Eon Silicon Solution Inc.
|
| 218500 218125 218010 218016 218160 218032 |
5 x 20 mm Time Lag Fuse (Slo-Blo) Fuse 5 × 20毫米时滞保险丝（斯洛文尼 Blo）保险丝
|
Littelfuse, Inc.
|
