| PART |
Description |
Maker |
| FM25W25613 |
256Kb Wide Voltage SPI F-RAM
|
Cypress Semiconductor
|
| FM25VN02-DG FM25VN02-DGTR FM25V02-G FM25V02-GTR FM |
256Kb Serial 3V F-RAM Memory
|
Cypress Semiconductor
|
| ULS-2004R-883 ULS-2014R-883 ULS-2024R-883 ULS-2003 |
Single inverter
ST72E311/ST72T311 - 8-BIT MCU WITH 8 TO 16K OTP/EPROM, 384 TO 512 BYTES RAM, ADC, WDG, SCI, SPI AND 2 TIMERS
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
ST62T85B/ST62E85B/ST6285B - 8-BIT OTP/EPROM/ROM MCU WITH LCD DRIVER, EEPROM AND A/D CONVERTER
8/16-bit MCU family with up to 64K ROM/OTP/EPROM and up to 2K RAM
Folder actuator
ST6215C/ST6225C - 8-BIT MCUS WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET
ST72101/ST72212/ST72213 - 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS 七倍外设驱
5V VERY LOW DROP VOLTAGE REGULATORS 七倍外设驱
|
RECOM Electronic GmbH
Linear Technology, Corp.
|
| W78LE812/P/F |
8-bit MCU w/ 8Kx8 FLASH, 256x8 RAM, 8 Ext. Interrupts for Wake-up, Wide Voltage Version
|
Winbond Electronics
|
| GS70328TS-8IT GS7032 GS70328SJ GS70328SJ-10 GS7032 |
256K Async SRAMs
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
32K x 8 256Kb Asynchronous SRAM 32K的8 256Kb的异步SRAM
32K x 8 256Kb Asynchronous SRAM
|
GSI[GSI Technology]
Electronic Theatre Controls, Inc.
|
| HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| STM32F401VB |
ARM Cortex-M4 32b MCU FPU, 105 DMIPS, 256KB Flash/64KB RAM, 11 TIMs, 1 ADC, 11 comm. interfaces
|
STMicroelectronics
|
| CY7C1041CV33-12ZSXE CY7C1041CV3308 CY7C1041CV33-10 |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 10 ns, PDSO44
4-Mbit (256K x 16) Static RAM
|
Cypress Semiconductor, Corp.
|
| FM25L16B-DG FM25L16B-DGTR |
16-Kbit (2 K 8) Serial (SPI) F-RAM
|
Cypress
|
| M27W201-80K6TR M27W201-200NZ6TR M27W201-80NZ6TR M2 |
2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM
Test Spring Probe; Current Rating:3A; Leaded Process Compatible:Yes; Length:0.060"; Peak Reflow Compatible (260 C):No; Tip/Nozzle Style:90 Concave RoHS Compliant: Yes 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储
Triple 3-Input Positive-AND Gates 14-SO 0 to 70
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SO 0 to 70
Triple 3-Input Positive-AND Gates 14-PDIP 0 to 70
Triple 3-Input Positive-AND Gates 14-SOIC 0 to 70
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
