| PART |
Description |
Maker |
| MSM5432128 MSM5432126 MSM5432126_8 |
131072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
From old datasheet system
|
OKI[OKI electronic componets]
|
| M5M28F101AFP |
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M51008BKR-15VLL-I M5M51008BKR-12VLL M5M51008BKR- |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TC55BS8128J-12 TC55BS8128J-10 |
131072 WORD X 8 BIT SYNCHRONOUS STATIC RAM
|
Toshiba Semiconductor
|
| M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 |
Memory>Low Power SRAM
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| MC-454AC726 |
4M-Word By 72-BIT Dynamic RAM Module(4M×72位动态RAM模块) 分词72位动态内存模块（4米72位动态内存模块）
4M-Word By 72-BIT Dynamic RAM Module(4M?72浣????AM妯″?)
|
NEC Corp.
NEC, Corp.
|
| HN27C101AG |
131072-word 8-bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
| MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块)
From old datasheet system
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
| HM628128LFP |
131072-word x 8-bit High Speed CMOS Static RAM
|
Hitachi Semiconductor
|
| HM62V8128LT-12 HM62V8128LT-12L HM62V8128LT-15 HM62 |
131072-Word x 8-Bit Speed CMOS Static RAM 131072字8位高速CMOS静态RAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM)
2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
