PART |
Description |
Maker |
HYS72V8200GR-8-E HYS72V16200GR-8-E HYS72V16201GR-8 |
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 内存| 32MX72 |CMOS |内存| 168线|塑料 SDRAM|16MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|8MX72|CMOS|DIMM|168PIN|PLASTIC
|
INFINEON TECHNOLOGIES AG
|
HYM72V64C736BLT4-H HYM72V64C736BLT4-K |
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM - Registered DIMM 512MB
|
Hynix Semiconductor
|
HYS72V128320GR-7-D HYS72V256320GR-7.5-A HYS72V1630 |
SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|256MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC 内存| 32MX72 |CMOS |内存| 168线|塑料 SDRAM|16MX72|CMOS|DIMM|168PIN|PLASTIC 内存| 16MX72 |的CMOS |内存| 168线|塑料
|
Infineon Technologies AG
|
M393B1K70DH0 |
240pin Registered DIMM based on 2Gb D-die
|
Samsung semiconductor
|
M393B1G73BH0 M393B1G70BH0 |
240pin Registered DIMM based on 4Gb B-die
|
Samsung semiconductor
|
HYS72V32600GR-7.5 HYS72V32501GR-7.5 HYS72V128520GR |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC 256MB (32Mx72) PC133 (3-3-3) 1-bank 1GB (128Mx72) PC133 (3-3-3) 1-bank GB的(128Mx72)的PC1333-3-3银行 ?512MB (64Mx72) PC133 (3-3-3) 1-bank?
|
Infineon Technologies AG
|
HMP31GP7AFR4C-S5 HMP31GP7AFR4C-S6 HMP31GP7AFR4C-Y5 |
240pin Registered DDR2 SDRAM DIMMs based on 2Gb version A
|
Hynix Semiconductor
|
HMT41GV7CMR4A-H9 HMT325V7CFR8A HMT325V7CFR8A-H9 HM |
DDR3L SDRAM VLP Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HYS72D64320 HYS72D64320HBR-5-C |
184-Pin Registered Double Data Rate SDRAM Module 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA184
|
Qimonda AG
|
EBS51RC4ACFC-7A EBS51RC4ACFC EBS51RC4ACFC-75 |
512MB Registered SDRAM DIMM 512MB的注册SDRAM的内 512MB Registered SDRAM DIMM 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
GSM31P256KB-I66 GSM31P512KB-I66 |
x64 Interleaved Burst Mode SRAM Module 256KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统56KB二级高速缓冲存储器) 512KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统12KB二级高速缓冲存储器)
|
GSI Technology
|