PART |
Description |
Maker |
P4C1026-25J4C P4C1026-15CC P4C1026-15CI P4C1026-15 |
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PQCC28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC32 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDIP28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDIP28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDSO28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDSO28
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Pyramid Semiconductor, Corp. Pyramid Semiconductor Corporation Pyramid Semiconductor C...
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IS61C25616AL IS64C25616AL IS61C25616AL-10KI IS61C2 |
256K x 16 HIGH-SPEED CMOS STATIC RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44 256K x 16 HIGH-SPEED CMOS STATIC RAM
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Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC Integrated Silicon Solu...
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IDT70V7319S IDT70V7319S133DD |
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56 × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接 HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
|
Integrated Device Technology, Inc.
|
CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位)分位,写延迟LVTTL高速同步静态随机存储器56 × 18位)
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Sony, Corp.
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AM29SL400CT100REI AM29SL400CT150WAF AM29SL400CB120 |
CAP 150UF 4V 20% TANT SMD-7343-30 TR-7 M16C Series, 6N4 Group, 3-ch IEBus, 3-phase PWM, CRC 100P6Q-A; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PLQP0100KB-A High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48 High Speed CMOS Logic Octal InvertingTransparent Latch with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48 High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48 High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48 High Speed CMOS Logic 12-Stage Binary Counter 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 120 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 110 ns, PDSO48 High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
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Spansion Inc. Spansion, Inc. Xicon Passive Components Amphenol, Corp.
|
EM614163A-30 EM614163A-40 EM614163TS-30 EM614163TS |
256K x 16 High Speed EDO DRAM
|
Etron Tech List of Unclassifed Manufacturers ETRONTECH
|
MB81C86 |
CMOS 256K-BIT HIGH-SPEED SRAM
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Fujitsu Media Devices
|
MB81C84A |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|
MB81C81A MB81C81A-25 MB81C81A-35 |
CMOS 256K-BIT HIGH-SPEED SRAM
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Fujitsu Component Limited. Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited] Fujitsu Limited
|
IS61WV25616ALL IS61WV25616ALS |
256K X 16 High Speed Asynchronous CMOS Static Ram
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ISSI
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