| PART |
Description |
Maker |
| FBI2A4S1 |
(FBI2A4S1 - FBI2M4S1) Glass Passivated Bridge Rectifier
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Fagor
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| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS V(drm): 50V; 8A; glass passivated thyristor V(drm): 1000V; 8A; glass passivated thyristor V(drm): 100V; 8A; glass passivated thyristor V(drm): 200V; 8A; glass passivated thyristor V(drm): 400V; 8A; glass passivated thyristor V(drm): 600V; 8A; glass passivated thyristor V(drm): 800V; 8A; glass passivated thyristor
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STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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| DO-204AH BZX55C56RL BZX55C2V4 BZX55C62RL BZX83C2V7 |
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% SMALL SIGNAL SCHOTTKY DIODE IC,QUAD 2:1,MUX/DEMUX,ANALOG LANSW,6.2V,SOIC16 500 mW DO-35 Glass Zener Voltage Regulator Diodes 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH Single Supply, High Speed, Quad SPDT CMOS Analog Switch w/Master Enable 130 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 43 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 500 mW DO-35 Glass Zener Voltage Regulator Diodes 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 43 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 100 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 9.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH 500 mW DO-35 Glass Zener Voltage Regulator Diodes 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 500 mW DO-35 Glass Zener Voltage Regulator Diodes 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 500 mW DO-35 Glass Zener Voltage Regulator Diodes 27 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 500 mW DO-35 Glass Zener Voltage Regulator Diodes 22 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 500 mW DO-35 Glass Zener Voltage Regulator Diodes 500毫瓦DO - 35玻璃封装稳压二极 GLASS ZENER DIODES 500 MILLIWATTS 1.8.200 VOLTS 玻璃封装二极管电压为500毫瓦1.8.200 500mW ZENER DIODE 500 mW DO-35 Glass Zener Voltage Regulator Diodes
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http:// MOTOROLA INC Microsemi, Corp. Motorola Mobility Holdings, Inc. Diodes Incorporated Motorola Inc Motorola, Inc.
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| 15SMC68CA 1.5SMC100CA 1.5SMC10CA 1.5SMC8.2CA 1.5SM |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS/ 6.8 THRU 200 VOLTS Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压8.2V,双向玻璃钝化节点瞬变电压抑制 Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压7.5V,双向玻璃钝化节点瞬变电压抑制 Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压9.1V,双向玻璃钝化节点瞬变电压抑制 Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压13V,双向玻璃钝化节点瞬变电压抑制 Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(击穿电压12V,双向玻璃钝化节点瞬变电压抑制 BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(?荤┛?靛?13V,????荤???????????靛??????
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Central Semiconductor Corp. Central Semiconductor, Corp. Electronics Industry Public Company Limited http:// Central Semiconductor C...
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| RU2AG RU2BG RU2DG RU2GG RU2JG RU2KG RU2MG |
Ultra Fast Recovery Pack: DO-15 FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.5A (RU2AG - RU2MG) FULTRAFAST EFFICIENT GLASS
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Gulf Semiconductor
|
| 135D306X0006C2 135D206X0010C2 135D476X0010C2 135D1 |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to 200°C Operation Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55隆?C to 200隆?C Operation Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55掳C to 200掳C Operation Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55°C to 200°C Operation
|
VISAY[Vishay Siliconix]
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| EGP30A- EGP30J EGP30A |
Fast Rectifiers (Glass Passivated) 3.0 Ampere Glass Passivated High Efficiency Rectifiers(平均整流电流3.0安培高效率玻璃钝化整流器)
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
| HDG320240 320240 |
Chip On Glass technology 320 X 240 Dots Graphics Chip On Glass technology 在玻璃芯片技
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List of Unclassifed Manufacturers ETC[ETC] Hantronix,Inc Electronic Theatre Controls, Inc.
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| DO-204AH 1N5918B MZ4625 BZX79C7V5RL BZX79C10 BZX79 |
500 mW DO-35 Glass Zener Voltage Regulator Diodes 500mWDO-35GlassZenerVoltageRegulatorDiodes
GLASS ZENER DIODES 500 MILLIWATTS 1.8.200 VOLTS
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MOTOROLA[Motorola, Inc] EIC discrete Semiconductors Motorola Inc
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction) IC REG VOLT 4.8V 240MA SOT-23 Rectifiers(Rugged glass package/ using a high temperature alloyed construction) Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设 Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
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PHILIPS[Philips Semiconductors] http:// NXP Semiconductors N.V.
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| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN Diodes Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
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Vishay Beyschlag
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| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
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