| PART |
Description |
Maker |
| MCH5810 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
| ECH06A20 |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
ETC[ETC]
|
| C30T04QH |
SBD
Schottky Barrier Diode
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| KSQ30A04 |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
ETC
http://
|
| UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| MA2YD23 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| MA3J745E MA3J745D MA745WA MA745WK |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| CPH6702 1160 |
TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| MCH5837 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2808 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
