| PART |
Description |
Maker |
| KVR100X64SC2/64 |
64MB 100MHz Non-ECC CL2 SODIMM 64MB00MHz的非ECC CL2的的SODIMM
|
Samsung Semiconductor Co., Ltd.
|
| SDN12864L1B62MT-50 SDN12864L1B62MT-60 |
1024MB DDR SDRAM SO-DIMM
|
List of Unclassifed Man...
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| W3EG72255S-AJD3 |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
White Electronic Design...
|
| W3EG72126S335JD3 W3EG64255MS100JD3GG W3EG64255MS10 |
1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG72126S202JD3 W3EG72126S-AJD3 W3EG72126S-D3 W3E |
1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
White Electronic Designs Corporation
http://
White Electronic Design...
|
| W3EG72256S263AJD3 W3EG72256S-AJD3 |
2GB-256Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
http://
White Electronic Designs Corporation
|
| M368L3223CTL M368L3223CTL-LB3 M368L3223CTL-CA2 M36 |
256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
