| PART |
Description |
Maker |
| HY57V561620B HY57V561620BLT-6I HY57V561620BLT-8I H |
SDRAM - 256Mb
4 Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IS42S32800D |
8M x 32 256Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution
|
| NT5SV32M8AT-8B NT5SV32M8AT-75B NT5SV32M8AT-7K NT5S |
256Mb Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| NT5DS16M16CS NT5DS16M16CS-5T NT5DS16M16CS-6K NT5DS |
256Mb DDR Synchronous DRAM
|
NanoAmp Solutions, Inc.
|
| EM484M3244VTB-75FE EM488M3244VTB-75FE EM482M3244VT |
256Mb (2M×4Bank×32) Synchronous DRAM
|
Eorex Corporation
|
| EM48BM0884VTA EM48BM0884VTA-6F EM48BM0884VTA-7F EM |
256Mb (8M×4Bank×8) Synchronous DRAM
|
Eorex Corporation
|
| EM48AM1684VTC09 EM488M1684VTC-75FE EM484M1684VTC-8 |
256Mb (4M?4Bank?16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| H57V2582GTR |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
|
Hynix Semiconductor
|
| MT48LC64M4A299 |
Synchronous DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| NT256S72V89A0G-75B NT256S72V89A0G-7K NT256S72V89A0 |
256Mb: 32Mx72 SDRAM module based on 32Mx8, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
