| PART |
Description |
Maker |
| TMM24256 |
MOS Memory
|
Toshiba
|
| UPD2102AL UPD2102AL-2 UPD2102AL-4 |
1024 BIT FULLY DECODED STATIC MOS RANDOM ACCESS MEMORY
|
NEC
|
| BR34E02FVT-3 |
Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules)
|
Rohm
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT88SC0104CA-SU88SC0104 AT88SC0104CA-MP88SC0104 AT |
SPECIALTY MEMORY CIRCUIT, PDSO8 GREEN, PLASTIC, SOIC-8
SPECIALTY MEMORY CIRCUIT, DMA
SPECIALTY MEMORY CIRCUIT, QMA
SPECIALTY MEMORY CIRCUIT, PDIP8 GREEN, PLASTIC, PDIP-8
SPECIALTY MEMORY CIRCUIT, PTSO8
|
Atmel, Corp.
ATMEL CORP
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| LH28F400BG-TL85 LH28F400BG-L85 LH28F400BG LH28F400 |
4M-BIT (256 x 16) SmartVoltage Flash Memory
4M-BIT (256KB x16) SmartVoltage Flash MEMORY
4M-BIT(256KBx16) SmartVoltage Flash MEMORY
4M-BIT (256K x 16)Smart Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| LH28F008SCHT LH28F008SCHT-85 LH28F008SCN-L120 LH28 |
8MBIT (1 MB x 8)Smart Voltage Flash Memory 40pin STSOP
8Mbit Flash Memory
8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY
8MBIT (1 MB x 8)Smart Voltage Flash Memory 44pin PSOP
|
Sharp Electrionic Components
|
| K5A3280YBC-T855 K5A3380YBC-T855 K5A3280YTC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69 8 X 11 MM, 0.80 MM PITCH, 1.20 MM HEIGHT, TBGA-69
MCP MEMORY
|
http://
Fujitsu, Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
