| PART |
Description |
Maker |
| M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM
4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp)
4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位（为512k × 8），5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM
GSI Technology, Inc.
|
| GVT73128S24 GVT73128A24 73128A24 GVT73128S24T-12I |
x24 SRAM x24的SRAM
From old datasheet system
128K X 24 ASYNCHRONOUS SRAM
|
Electronic Theatre Controls, Inc.
Galvantech
|
| AS7C3256A-8 AS7C3256A-8TCN AS7C3256A-8JC AS7C3256A |
SRAM - 3.3V Fast Asynchronous
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 8 ns, PDSO28
Dual 4-Input Positive-AND Gate 14-SSOP -40 to 85 32K X 8 STANDARD SRAM, 8 ns, PDSO28
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| HM62W16255HCLTT-12 HM62W16255HCTT-12 HM62W16255HCJ |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| HM6216255HCLTT-12 HM6216255HCTT-12 HM6216255HCJP-1 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| GS71208TP-8T GS71208TP-8 |
8ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 8 ns, PDSO32 0.400 INCH, TSOP2-32
|
GSI Technology, Inc.
|
| IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM
JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70
WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc.
IDT
|
